Abstract

This thesis was performed to determine if low intensity reciprocity law -failure (RLF) exists in Kodak Micro Positive Resist B09 (KMPR 809) . At exposure irradiances at or below .44 mw/sq cm, it was observed that solublization of the photopolymer was incomplete, indicating that low-intensity RLF of the photosolubilization does exist. RLF was indicated by the formation of a "scum" layer over the exposed areas of the resist, the thickness of which increased with decreased irradiance. Mechanisms have been identified which may explain the RLF of the photoreaction. Confirmation of the proposed mechanisms could be the subject of another study. The RLF was expected to lead to proportional changes in the line width of the resist patterns, due to intensity differences in the shadow areas of the mask. Line width was found to be independent of irradiance and time of exposure, and the RLF was within the experimental error.

Library of Congress Subject Headings

Integrated circuits--Masks

Publication Date

1984

Document Type

Thesis

Student Type

Graduate

Department, Program, or Center

School of Photographic Arts and Sciences (CIAS)

Advisor

Titus, Art

Comments

Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works in December 2013.

Campus

RIT – Main Campus

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