Currently, the electrical drivers behind active-matrix flat-panel displays are polysilicon or amorphous silicon based thin-film transistors (TFTs). The ability to integrate transistors onto the glass substrate offers certain design and performance advantages over package-level integration with bulk silicon ICs; this is commonly referred to as system-on-glass (SOG) or system-on-panel (SOP). System on glass may also lower the manufacturing costs of the entire product. Cell phones, personal digital assistants, and entertainment systems are examples of applications that would benefit from system on glass integration. This project is a joint effort between the Microelectronic Engineering Department at RIT and Corning Incorporated. Thin- film transistors have been fabricated on a new substrate material which consists of a high-quality silicon layer on Corning’s Eagle 2000 flat-panel display glass. The substrate material has the potential of yielding transistors with higher performance than commercialized polysilicon and amorphous silicon thin film transistor technologies. The primary focus of this investigation was to solve the engineering challenges of dopant activation, deposited dielectric quality and interface charge associated with a low-temperature (LT) process. A process that is compatible with the thermal constraints of the glass has been designed and demonstrated through the fabrication of MOS transistor. While the device characteristics demonstrate the on-state and off-state behavior of standard bulk-silicon devices, there are unique features which required an extensive study to understand and explain the governing physics. Device simulation was used to develop a comprehensive model of operation for the devices.
Library of Congress Subject Headings
Thin film transistors; Information display systems--Materials; Integrated circuits--Materials
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Saxer, Robert, "Development and characterization of high performance transistors on glass" (2006). Thesis. Rochester Institute of Technology. Accessed from
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