Charge-injection devices (CID's) have been around almost as long as charge-coupled devices (CCD's), yet have generally been overlooked for solid state imaging applications due to their slower operating speeds. However, CID arrays offer advantages over CCD based arrays for certain applications where spectral response and/or X-Y addressing are required. In order to fabricate CID based imaging arrays, a single level poly CMOS (p-well) process has been modified into a double level poly CMOS (p-well) process that will allow fabrication of both imaging structures and drive circuitry. These modifications are optimized for CID based structures, yet will also allow working CCD based arrays to be fabricated with this process. Measurements obtained from processed wafers were compared to values obtained using SUPREM IV simulation software from Technology Modeling Associates Inc. and after analysis, further recommendations were made to improve the process.
Library of Congress Subject Headings
Semiconductors--Design and construction; Integrated circuits--Design and construction; Imaging systems--Design and construction
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Schippers, Michael, "Process design for charge-injection based imaging array fabrication" (1996). Thesis. Rochester Institute of Technology. Accessed from
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