Michael June

Abstract

The processing speed of modern microchips and the density of components at the card level has been increasing at a steady rate. With these increases, come an increase in heat generation and a need to dissipate very high heat fluxes. Heat sinks that employ very narrow channels, on the order of 58 - 600um wide have been shown to dissipate heat fluxes as high as 10,000 kW/m2 (Tuckerman, 1984) while maintaining chip temperatures below 130 C. The current study investigates the heat transfer characteristics of single and two-phase flows in a 200 Jim wide channel. Water was used as a working fluid at three flow rates and at three surfactant concentrations. The results showed a strong dependence on flow rate in the single phase region, and up to 9120 kW/m was dissipated while maintaining a surface temperature of 1 15 C. The data also suggest a reduction in heat transfer efficiency with the addition of the surfactant sodium laurel sulfate (0.01%) in the single phase. There was a delay in the onset of nucleate boiling, however as expected for the same surfactant concentration. In the two-phase region, there was no significant change in the heat transfer characteristics with the addition of surfactants.

Library of Congress Subject Headings

Heat sinks (Electronics)--Design and construction; Heat--Transmission; Integrated circuits--Cooling; Surface active agents

Publication Date

10-1-1999

Document Type

Thesis

Department, Program, or Center

Mechanical Engineering (KGCOE)

Advisor

Kandlikar, S.

Advisor/Committee Member

Venkataraman, P.

Advisor/Committee Member

Kochersberger, K.

Comments

Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TK7872.H4 J86 1999

Campus

RIT – Main Campus

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