Abstract

The feasibility of photographic speed values for positive photoresist is evaluated. Speed is defined as the reciprocal of exposure necessary to produce a desired response. An outline of the microlithographic process, the chemistry of positive resist, and previous exposure models precede the experimental body of work to facilitate understanding of the photoresist system. The experimental method proposes a mathematical model describing the resist response to exposure. Photographic speed values result from this model. They are tested for sensitivity to process changes using Analysis of Variance. One speed definition is chosen as a possible standard and process control. It is based on the exposure required to produce a resist thickness of .4 microns above the under-lying substrate.

Library of Congress Subject Headings

Photoresists; Masks (Electronics); Photolithography

Publication Date

5-1-1981

Document Type

Thesis

Department, Program, or Center

School of Photographic Arts and Sciences (CIAS)

Advisor

Carson, J.F.

Comments

Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TR940.F55

Campus

RIT – Main Campus

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