Abstract
A procedure is established which will enable the study of contrast and sensitivity characteristics of electron-beam resist materials. The imaging system includes an electron beam-sensitive resist coating on an oxidized silicon substrate exposed with a scanning electron microscope (SEM) and developed in a suitable solvent. The results correlate with published data. A chemically amplified electron-beam resist imaging system is studied using a three level, three factor Box-Behnken design. The effects of postbake temperature, postbake time, and development time on contrast and sensitivity are presented.
Library of Congress Subject Headings
Photoresists; Scanning electron microscopes
Publication Date
4-1-1992
Document Type
Thesis
Department, Program, or Center
Chester F. Carlson Center for Imaging Science (COS)
Advisor
Fuller, Lynn
Advisor/Committee Member
Daly, Robert
Advisor/Committee Member
Marsh, Dana
Recommended Citation
Pyles, Randall C., "A Procedure to characterize electron-beam resist using a scanning electron microscope and study of process optimization of an electron beam imaging system using experimental design methods" (1992). Thesis. Rochester Institute of Technology. Accessed from
https://repository.rit.edu/theses/2829
Campus
RIT – Main Campus
Comments
Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TK8331 .P94 1992