Titanium nitride was studied for use in two applications: as a barrier metal in an aluminum metallization and as a Schottky diode metal on n type silicon(ND = 1X1015/cm3). The films were reactively sputtered in an RiT magnetron configuration using a Perkin-Elmer 2400 sputtering system. Effects of heat treatment temperature on performance were studied for both applications. TiN as sputtered in this experiment was shown to be an effective barrier against Al-Si interdiffusion. Annealing temperature was shown to affect the Schottky barrier height, which ranged from 471 to 658 mV as calculated from specific contact resistivity.
"Titanium Nitride Diffusion Barriers and Schottky Diodes,"
Journal of the Microelectronic Engineering Conference: Vol. 8
, Article 9.
Available at: http://scholarworks.rit.edu/ritamec/vol8/iss1/9