The goal of this project is to install an atmospheric pressure chemical vapor deposition of tetraethoxysilane (APCVD TEOS) process at RIT. The advantage of atmospheric TEOS includes, among many reasons, good uniformity, high deposition rate, superior step coverage and conformality, ease of handling, stability, and safety. In developing the process, an experimental design was utilized, using factors: deposition temperature, bubbler temperature, and N2 carrier gas flow were examined. Responses include: deposition rate on silicon, deposition rate on oxide, thickness uniformity, refractive index, refractive index uniformity, and etch rate in hydrofluoric acid. Etch rate after 30mm @ 1050°C anneal, dielectric properties, and composition analysis was also examined with selected samples. The optimum process parameters found were: 6400 C deposition temperature, 68°C bubbler temperature, 2.6 L/min N2 carrier gas flow through bubbler, 3 L/min O~ flow, and 4.5 L/min pure N2 flow into tube.
"Atmospheric Pressure CVD of TEOS,"
Journal of the Microelectronic Engineering Conference: Vol. 8
, Article 8.
Available at: http://scholarworks.rit.edu/ritamec/vol8/iss1/8