A preliminary effort in Electroluminescent (EL) device fabrication at Rochester Institute of Technology’s Microelectronic Engineering Fabrication Facilities was attempted in this study. The fabrication of several AC driven electroluminescent devices, on silicon substrates were studied. Devices were fabricated on heavily doped p-type silicon, with tantalum pentaoxide dielectric and various phosphor materials. No working devices were fabricated in this initial attempt. However, deeper understanding of the functionality of each layer was gained.
"Fabrication of Thin Film Electroluminescent Devices for Display Applications,"
Journal of the Microelectronic Engineering Conference: Vol. 8
, Article 7.
Available at: http://scholarworks.rit.edu/ritamec/vol8/iss1/7