The first Thin Film Transistor (TFT) CMOS process for RIT’s Semiconductor Processing Center utilizing SIMOX wafers was developed. A standard 9 mask-set P-well CMOS process flow originally designed for bulk silicon was modified to accommodate the new starting material.
"SIMOX CMOS Process Design and Fabrication,"
Journal of the Microelectronic Engineering Conference: Vol. 8
, Article 3.
Available at: http://scholarworks.rit.edu/ritamec/vol8/iss1/3