Development rate measurement (DRM) analysis yields very accurate resist modeling parameters. A procedure for extracting these parameters was instituted for the Perkin-Elmer DRM tool at RET. New software packages for the DRM tool and ProDRM simulations were used to extract development rate parameters for current i line resists. The process established will be repeated for future resists.
"Development Rate Monitor: Process Integration and Resist Parameter Extraction,"
Journal of the Microelectronic Engineering Conference: Vol. 8
, Article 16.
Available at: http://scholarworks.rit.edu/ritamec/vol8/iss1/16