Publication Date
1996
Document Type
Paper
Abstract
In this study silicon nitride has been seen to be an effective anti-reflective coating for use at wavelengths from 190 to 436mm. The report discusses effects of the film such as index of refraction, extinction coefficient, thickness, and stoichiometric composition for the application of ARC in microlithography.
Recommended Citation
Stern, David J.
(1996)
"Inorganic ARC for Use in Microlithography,"
Journal of the Microelectronic Engineering Conference: Vol. 6:
Iss.
1, Article 14.
Available at:
https://repository.rit.edu/ritamec/vol6/iss1/14