Several variations on the order of the RCA clean have been investigated for their effects on oxide charges and interface trap density of thin gate oxides (200 - 250A). Surface Charge Analysis (SCA) will be employed to evaluate charges and traps immediately after oxide growth. Capacitors with aluminum gate were then fabricated to determine the dielectric field breakdown testing on an HP4145 parametric analyzer, the total oxide charge and interface trap density have been obtained from C-V testing using a Keithley simultaneous high frequency / low frequency system.
"Effects of Variations in RCA Clean on Breakdown Characteristics of Thin Gate Oxides,"
Journal of the Microelectronic Engineering Conference: Vol. 6
, Article 11.
Available at: http://scholarworks.rit.edu/ritamec/vol6/iss1/11