Rochester Institute of Technology's (RIT's) first flash EEPROM cell was designed, fabricated and tested at its Microelectronic Engineering Fabrication Facilities. The RIT flash memory cell was modeled after Intel's flash memory cell was modeled after Intel's flash EEPROM cell and realized a channel length = 8um and channel width = 32um. The fabrication technology required critical process development steps including a high quality 100A tunnel oxide, 100 A polySi oxide and a 200A reactive sputter-deposited silicon nitride film. The cell successfully demonstrated 10 program and erase cycles and a programmed charge state for 130 hours before unacceptable charge loss occurred.
Zawadzki, Keith E.
"Flash EEPROM Fabrication,"
Journal of the Microelectronic Engineering Conference: Vol. 6
, Article 1.
Available at: http://scholarworks.rit.edu/ritamec/vol6/iss1/1