Microposit SAL6O3, a negative working chemically amplified electron beam resist, was studied for four developers of different normality: Microposit MF322 (0.266 N), MF321 (0.210 N), MF320 (0.255 N), or MF319 (0.237 N). Wafers were exposed to create eight regions, each with incrementally increasing exposure. Development in each of the eight zones was monitored simultaneously with a Perkin Elmer 5900 Development Rate Monitor (DRM). Increased developer normality was shown to increase development rate and photoresist contrast, but decreased sensitivity.
Guggemos, Kimberly A.
"A DRM Study of Microposit SAL603 Resist in Developers of Different Normality,"
Journal of the Microelectronic Engineering Conference: Vol. 5
, Article 8.
Available at: http://scholarworks.rit.edu/ritamec/vol5/iss1/8