Publication Date
1991
Document Type
Paper
Abstract
SiO films of high quality have been deposited by Electron Cyclotron Resonance (ECR) at temperatures less than 400 ° C. Chemistries of 02 and 25 % SiHqin Ar were used. Deposition rates of about 220 A/minute were obtained, studying films of typical thicknesses of 1100 A. Characteristics of the films studied include refractive index of 1.467 — 1.477, dielectric strengths of 5.0 — 9.0 MV/cm, dielectric constants of 3.8 — 4.2, and buffered HF etch rates of 19 - 21 A/second. These characteristics were shown to degrade around a deposition temperature of 200 °C, with temperatures on either side of this range yielding better characteristics. Optical emission spectroscopy was also utilized to identify the species present in the plasma.
Recommended Citation
Yoder, Merle D. Jr
(1991)
"Low Temperature Deposition of Si02 Films by ECR,"
Journal of the Microelectronic Engineering Conference: Vol. 5:
Iss.
1, Article 30.
Available at:
https://repository.rit.edu/ritamec/vol5/iss1/30