A chip was designed containing lateral bipolar PNP devices with base widths ranging from four to ten microns. Vertical NPN devices were included in the designs. The transistors were fabricated using a double diffused process employing solid sources. Two different boron collector/emitter predepositions were performed in order to study the effects of the p-type diffusion sheet resistance on both lateral PNP and vertical NPN devices. Testing of the lateral PNP devices shows very small Early voltages for the five and six micron designs, while the four micron design exhibits punchthrough.
Will, James A. II
"Design and Fabrication of a Lateral Bipolar PNP Transistor Compatible with RIT's Double Diffused Process,"
Journal of the Microelectronic Engineering Conference: Vol. 5
, Article 28.
Available at: http://scholarworks.rit.edu/ritamec/vol5/iss1/28