Publication Date
1991
Document Type
Paper
Abstract
A study of the etch characteristics of a thermally grown silicon dioxide etch in RITEs 2406 PLASMATRAC RIE was performed for a C2F6 / CHF3 / C02 gas mixture. Correlations between the amount of CHF3 and C02 introduced and Si02 etch rates and selectivity to polysilicon were investigated using a statistical experimental design. Si02 etch rates as high as 1018 A/mm were achieved with a corresponding selectivity to polysilicon of 2.84:1. At a gas flow of 60 sccm C2F6, 171 sccm CHF3, 48 sccm C02, 255 watts & 150 mtorr, an optimized etch for selectivity was found to give an Si02 etch rate of 910 A/mm with a corresponding selectivity of 5.29:1. Uniformity of the etch rate across the wafer was found to be good for the Si02 etch with etch rates varying less than 5% across the wafer. Helium additions were found to improve the uniformity of polysilicon etch rates from their nominal value of 25% to 11% across the wafer.
Recommended Citation
Thompson, Eric E.
(1991)
"Affects of Carbon Dioxide and Helium on Reactive ION Etching of Silicon Dioxide,"
Journal of the Microelectronic Engineering Conference: Vol. 5:
Iss.
1, Article 25.
Available at:
https://repository.rit.edu/ritamec/vol5/iss1/25