A five cask level process was used to fabricate single level, poly gated charge coupled devices intended for use as optical imagers. Three micron gate spacing was achieved with an emulsion cask through tight control of the lithography process. Testing revealed a short between the gates. It is hypothysised to result from insufficient poly gate etching or over diffusion of the gate.
"Linear Poly Gate Charge Coupled Device Imaging Arrays,"
Journal of the Microelectronic Engineering Conference: Vol. 5
, Article 20.
Available at: http://scholarworks.rit.edu/ritamec/vol5/iss1/20