A dry etch S1O2 process was optimized using the Plasmatrac 2406 RIE etcher at RIT, while maintaining selectivity to polysilicon and photoresist. The optimized process had Power of 350 Watts, Pressure of 127 mTorr, C2F6 of 60 sccm, and CHF3 of 171 sccm; This provided an oxide to poly selectivity of 5.5:1 with an oxide slope of 60°.
Morvay, Daniel P.
"Determination of Si02 Profiles Achievable with RIE Using C2F6 and CHF3,"
Journal of the Microelectronic Engineering Conference: Vol. 5
, Article 18.
Available at: http://scholarworks.rit.edu/ritamec/vol5/iss1/18