Variations in both MOS capacitor structure and fabrication process were characterized using 1MHz C-V measurements. This involved processing MOS capacitors with and without backside oxide, and wet etching versus plasma ashing photoresist. The experimental results show large flatband shifts in wafers that were plasma ashed. ~ longer than expected anneal was utilized to reduce the C-V shifts caused by positive charge build-up in the oxide. The backside oxide did not grossly affect the capacitance measurements.
Buczkowski, Michael D.
"Processing Techniques of MOS Capacitors,"
Journal of the Microelectronic Engineering Conference: Vol. 4
, Article 6.
Available at: http://scholarworks.rit.edu/ritamec/vol4/iss1/6