Publication Date
1990
Document Type
Paper
Abstract
A portable conformable mask (PCM) system employing KTIS2O as the imaging layer and PMMA, a deep UV sensitive photoresist, as the planarizing layer was investigated. Process parameters of a PMMA prebake at 185’C and methanol soak of 90 seconds achieved a resolution of 2.16 microns. The PCM system was able to achieve better results than a single layer system with regards to resolution and linewidth control.
Recommended Citation
Boehm, Mark A.
(1990)
"Bi-Layer Deep UV Resist System,"
Journal of the Microelectronic Engineering Conference: Vol. 4:
Iss.
1, Article 5.
Available at:
https://repository.rit.edu/ritamec/vol4/iss1/5