Two bilayer E-beam/DUV resist schemes were developed using a DUV sensitive PMGI planarization layer and two E-beam sensitive imaging layers. PMM~ and Olin-Hunt Waycoat HEBR-214 were used as imaging layers. The HEBR-214/ PMGI system is totally aqueous developable. Both systems offer several advantages over other bilayer systems including thermal stability, low interfacial - layer formation, and low toxicity.
"Bilayer E-Beam/DUV Resist Systems,"
Journal of the Microelectronic Engineering Conference: Vol. 4
, Article 2.
Available at: http://scholarworks.rit.edu/ritamec/vol4/iss1/2