The effects of process induced defects, such as dislocations and/or oxide induced stacking faults, were investigated for a bipolar process employing solid diffusion sources. Carborundum BN975 Boron Sources have a low temperature oxide (LTD) step to minimize defects. Two bipolar processes, one with and one without LTD were run and electrical tests done to evaluate device characteristics. ~t this point results were inconclusive.
"Investigation of Process Induced Defects Using a LTO Process,"
Journal of the Microelectronic Engineering Conference: Vol. 4
, Article 12.
Available at: http://scholarworks.rit.edu/ritamec/vol4/iss1/12