Publication Date
1989
Document Type
Paper
Abstract
A FORTRAN program has been written to manipulate the data obtained from 1 MHZ C—V measurements. This program utilizes the data to compute information on the impurity profile of capacitors. Capacitors were fabricated with varying doping profiles and tested. The doping profiles obtained using this program were consistent with SUPREM models.
Recommended Citation
Cheskis, David J.
(1989)
"Impurity Concentration Profile Determination By Capacitance-Voltage Measurements,"
Journal of the Microelectronic Engineering Conference: Vol. 3:
Iss.
1, Article 9.
Available at:
https://repository.rit.edu/ritamec/vol3/iss1/9