Undyed, AZ 1512,and dyed, AZ 1512-SFD, photoresist was coated on aluminum covered oxide topography. The exposure was varied from 7OmJ/cm2 to 130m3/cm2 and the 3.Oum line/space pairs were measured to calculate the exposure latitude. The resist lines were examined over topography for signs of reflective notching. Results showed an increase of the exposure latitude from 9.1% to 9.9% for the dyed resist. The data was inconclusive in determining any improved control of reflective notching with the use of dyed photoresist.
"Study of the Characteristics of Dyed Photoresist,"
Journal of the Microelectronic Engineering Conference: Vol. 3
, Article 7.
Available at: http://scholarworks.rit.edu/ritamec/vol3/iss1/7