Experiments relevant to the development an integrated Hall effect sensor have been performed. Carrier concentrations calculated from the Hall voltage generated in samples of bulk silicon did not agree veil with values measured by tour point probe or Van der Pauw techniques. However, the relationship between Hall voltage and magnetic field was highly linear and should produce a well behaved sensor. A sensor design has been proposed, but not fabricated.
Wilkinson, William H.
"Integrated Hall Effect Sensor,"
Journal of the Microelectronic Engineering Conference: Vol. 3
, Article 37.
Available at: http://scholarworks.rit.edu/ritamec/vol3/iss1/37