A localized oxidation of silicon (LOCOS) process was investigated using nitrogen ion implantation. The doses of 2E12, 2E13, 2E14, and 1E15 atoms/cm2 were implanted through a photoresist mask using the Varian/Extrion 40-100 ion implanter. The results show the initial formation of a LOCOS oxidation. The localized image faded on extended oxidation which indicates the implanted region did not adequately inhibit the diffusion of oxygen.
Walters, Joseph W.
"Investigation of LOCOS Process Using Nitrogen Implantation,"
Journal of the Microelectronic Engineering Conference: Vol. 3
, Article 35.
Available at: http://scholarworks.rit.edu/ritamec/vol3/iss1/35