Plasma Damage to NMOS Capacitors

Authors

Matthew J. Strong

Publication Date

1989

Document Type

Paper

Abstract

High frequency C-V curves were taken of NMOS capacitors to determine the effect that a RF oxygen plasma has on the underlying thin gate oxide. This plasma was used to remove a positive photoresist. The C-V curves show a threshold voltage shift of 3.75 volts with respect to the undamaged capacitors. The C-V curves also show that the thinner were more affected than the thicker oxides.

Recommended Citation

Strong, Matthew J. (1989) "Plasma Damage to NMOS Capacitors," Journal of the Microelectronic Engineering Conference: Vol. 3: Iss. 1, Article 34.
Available at: https://repository.rit.edu/ritamec/vol3/iss1/34