High frequency C-V curves were taken of NMOS capacitors to determine the effect that a RF oxygen plasma has on the underlying thin gate oxide. This plasma was used to remove a positive photoresist. The C-V curves show a threshold voltage shift of 3.75 volts with respect to the undamaged capacitors. The C-V curves also show that the thinner were more affected than the thicker oxides.
Strong, Matthew J.
"Plasma Damage to NMOS Capacitors,"
Journal of the Microelectronic Engineering Conference: Vol. 3
, Article 34.
Available at: http://scholarworks.rit.edu/ritamec/vol3/iss1/34