Integrated Injection Logic gates (IlL) were fabricated at RIT by the use of a double diffused, four mask process. The IlL devices contained neither a buried contact nor an epitaxial layer. The propagation delay time of invertor gates was measured at different injection current levels.
Phan, Tu T.
"Characterization of Integrated Injection Logic,"
Journal of the Microelectronic Engineering Conference: Vol. 3
, Article 29.
Available at: http://scholarworks.rit.edu/ritamec/vol3/iss1/29