This project is concerned with double-layer metal using National Polyimide EL-5500 as the of an aluminum /dielectric/ aluminum scheme. The polyimide was an attractive candidate for the dielectric die to its use in trilayer resist schemes. However, results obtained showed incomplete via clear-out.
"Process Development of Multilevel Metallization Utilizing National Semiconductor Polyimide El-5510,"
Journal of the Microelectronic Engineering Conference: Vol. 3
, Article 28.
Available at: http://scholarworks.rit.edu/ritamec/vol3/iss1/28