A dry etch process was developed and characterized to etch silicon dioxide (Si02). Characterization included increasing the etch rate o-f Si02 while decreasing the etch rate of a KTIB2O positive photoresist mask, which is used in RIT’s fabrication processes. Successful masking and etching of silicon dioxide occurred with 15 sccm CHF3 mixed with 6 sccm 02 at a chamber pressure of 750 - 800 mtorr and a power of 100 watts.
Meister, Eric P.
"Plasma etch Optimization of Silicon Dioxide with a Resist Mask,"
Journal of the Microelectronic Engineering Conference: Vol. 3
, Article 26.
Available at: http://scholarworks.rit.edu/ritamec/vol3/iss1/26