The growth of anodic aluminum films on silicon was investigated. The films were formed using an electrolytic cell with sulfuric acid and a lead cathode. The effects of electric potential, electrolyte concentration and anneal time were investigated with respect to film thickness, index of refraction and oxide quality with a three level-three factor Box-Behnken designed experiment. The results of the statistical analysis indicated poor repeatability in film qualities as evidenced in ellipsometric and C-V measurements.
"Growth and Characterization of Anodic Aluminum Oxide,"
Journal of the Microelectronic Engineering Conference: Vol. 3
, Article 19.
Available at: http://scholarworks.rit.edu/ritamec/vol3/iss1/19