Pure evaporated aluminum interconnects on a flat surface and over topography were subjected to high current densities of 8e5 A/cm2 and measured for Electromigration induced failure times. An electromigration test station was built and used for obtaining Mean Time to Failure, MTTF, data. A rapid statistical approach, where multiple interconnects under the identical conditions could be tested, was utilized to determine that the MTTF was lower for interconnects over topography versus flat surfaces.
"Electromigration Testing of Aluminum Interconnects,"
Journal of the Microelectronic Engineering Conference: Vol. 3
, Article 16.
Available at: http://scholarworks.rit.edu/ritamec/vol3/iss1/16