The silylation of KTI Positive Resist 809 with hexamethyldisilazane(HMDS) was performed by liquid phase and vapor phase techniques. A vacuum chamber was designed and constructed for the vapor phase silylation. Process evaluation was performed by oxygen plasma etch rates of silylated exposed and unexposed resist which showed that the vapor phase technique did change etch rates while liquid phase did not.
Koszelak, Donald R.
"Silyation of Positive Photoresist,"
Journal of the Microelectronic Engineering Conference: Vol. 3
, Article 15.
Available at: http://scholarworks.rit.edu/ritamec/vol3/iss1/15