Waycoat HEBR-214 Positive E-beam resist was characterized for coating properties, thickness vs. dose, and thickness vs. development time. For a thickness of .5 urn, resist sensitivity was 65 uC/crn2 for a 2 minute develop, and 20 uC/cm2 for a 4 minute develop. Contrast was 6.28, which promises good resolution. Dry etch selectivity of the resist over oxide and over poly-silicon was attempted, but poor results were obtained.
"Characterization of a New E-Beam Resist,"
Journal of the Microelectronic Engineering Conference: Vol. 3
, Article 12.
Available at: http://scholarworks.rit.edu/ritamec/vol3/iss1/12