This work endeavored to optimize and integrate a process for depositing and patterning the gate ﬁlm stack of TaN, Al2O3, Si3N4, SiO2, Si (TANOS) charge-trapping ﬂash (CTF) memory with an existing complementary metal-oxidesemiconductor process ﬂow. Fabricated capacitance-voltage devices with T-A-N-O thicknesses of 2500˚A, 110˚A, 75˚A, and 30˚ A respectively show characteristic charge-trapping in subsequent program/erase (P/E) cycles (likely modiﬁed Fowler-Nordheim tunneling) with a maximum possible program threshold voltage of 2.7V for 5sec 28V program and minimum erased threshold voltage of -2.5V for 5sec 15V erase, w/ total P/E threshold voltage swing 5.2V. Device wafers are currently at step 22 of 67 and will be continued in the future, eventually demonstrating hot carrier injection P/E schemes.
"TANOS Charge-Trapping Flash Memory Structures,"
Journal of the Microelectronic Engineering Conference: Vol. 21
, Article 6.
Available at: http://scholarworks.rit.edu/ritamec/vol21/iss1/6