Publication Date
2015
Document Type
Paper
Abstract
A process is created at the Rochester Institute of Technology Semiconductor & Microsystems Fabrication Laboratory (SMFL) to create crossbar structures. These structures can be created out of a variety of materials via different patterning methods, and can be used to investigate potential memristive behavior of many different materials. Using the crossbar structure, resistive switching of an Al/TiOx/Al structure is observed.
Recommended Citation
Olin-Ammentorp, Wilkie and Kurinec, Santosh
(2015)
"Resistive Transition Metal Oxide Memory,"
Journal of the Microelectronic Engineering Conference: Vol. 21:
Iss.
1, Article 5.
Available at:
https://repository.rit.edu/ritamec/vol21/iss1/5