Shadow Evaporation is demonstrated as a means of producing self-aligned crossbar structures with potential memristive applications. This serves as a solution to difficult metal oxide etching processes by substituting them with a single liftoff to form both electrodes. SEM and STEM analysis confirm the proper formation of the device and highlight opportunities for process optimization. The most significant improvement area is the replacement of the tantalum with aluminum for electrode material to prevent oxidation. The shadow evaporation process and device formation are the focus of this exercise.
"Self-Aligned Crossbar for Memristive Device Fabrication (May 2014),"
Journal of the Microelectronic Engineering Conference: Vol. 20
, Article 9.
Available at: http://scholarworks.rit.edu/ritamec/vol20/iss1/9