This paper presents a Hall effect sensor fabricated at the Semiconductor & Microsystems Fabrication Laboratory (SMFL) at the Rochester Institute of Technology. The Device was fabricated to have the maximum sensitivity possible with the available fabrication toolset and processes at the SMFL. The obtained resistivity of the fabricated devices was higher than expected and this affected the sensitivity of the devices. Results are shown where the devices are capable of sensing 100's of Gauss instead of the intended sensitivity of under 1 Gauss.
Espitia, Michell Graciani Melo
"MEMS Hall Effect Sensor,"
Journal of the Microelectronic Engineering Conference: Vol. 20
, Article 7.
Available at: http://scholarworks.rit.edu/ritamec/vol20/iss1/7