Silicon-based solar cell technology continues to dominate the solar cell market making efficiency improvements to this class of devices sought after. A RIE process for creating “Black Silicon (BS)” was developed and integrated into a monocrystalline- Si solar cell process. Solar cells with BS exhibited an Ravg of 3.8% compared to 38.4% for solar cells with no antireflection apparatus (λ = 360-750 nm). BS solar cells were also found to have an EQE 16.4% higher than that of the control (λ = 360-1100 nm). On average Jsc and FF was higher for the BS solar cells as compared to the control however solar cell performance comparisons were corrupted by manufacturing defects resulting in poor diode characteristics across all fabricated devices.
Lana, Jacob D.
""Black Silicon" by RIE for Photovoltaics,"
Journal of the Microelectronic Engineering Conference: Vol. 20
, Article 5.
Available at: http://scholarworks.rit.edu/ritamec/vol20/iss1/5