A study on the gas ambient (varying percent 02 flow) and gap spacing (distance between the target and wafer) during the sputter deposition of indium-gallium-zinc-oxide (IGZO) for a TFT channel material was executed. The effect these parameters have on electrical characteristics was investigated to better understand the role 02 vacancies play on device performance. This experiment was performed to enable investigations on IGZO TFTs without the use of external resources. Devices fabricated exhibited differences between treatment combinations, however results show a lower on-off current ratio, larger subthreshold swing (SS) and higher threshold voltage (Vth) than observed from devices fabricated with IGZO deposited through collaboration with Corning Incorporated.
"Investigation of Electrical Characteristics of Sputtered IGZO TFTs,"
Journal of the Microelectronic Engineering Conference: Vol. 20
, Article 3.
Available at: http://scholarworks.rit.edu/ritamec/vol20/iss1/3