An experiment to compare resistivity and carrier concentration results for p-type silicon using four point probe and Hall measurements is described. The effects of current magnitude and magnetic field magnitude on the results obtained using Hall measurements were also investigated. The Hall data and four point probe data was In close agreement for both carrier concentration and resistivity for specified ranges of current and magnetic field.
"Hall Measurements in Semiconductors,"
Journal of the Microelectronic Engineering Conference: Vol. 2
, Article 29.
Available at: http://scholarworks.rit.edu/ritamec/vol2/iss1/29