Hot electron injection was investigated using the HP 4145B SPA to induce Fewler- Nordheim tunneling. High frequency and quasi-static capacitance-voltage (C-V) measurements were taken on p-substrate MOS capacitors in order to generate the distribution of surface states throughout the band gap. The results proved inconclusive with no deformation of the low frequency C-V technique being observed.
Magliocco, Joseph P.
"Time Dependence of Hot Electron Induced Surface States,"
Journal of the Microelectronic Engineering Conference: Vol. 2
, Article 23.
Available at: http://scholarworks.rit.edu/ritamec/vol2/iss1/23