This paper investigates Neureuther and co-workers development model of positive novolak-type photoresist systems in aqueous alkaline developers. A measurement system for determining the exposure and development model parameter! is described. The dissolution rates for two developer solutions have been examined and the impact of the developer differences on resist profiles is illustrated. The dissolution rate of resist in metal ion free developer at various temperatures is investigated.
"An Integrated Approach to Positive Resist Development Characterization,"
Journal of the Microelectronic Engineering Conference: Vol. 2
, Article 22.
Available at: http://scholarworks.rit.edu/ritamec/vol2/iss1/22