Standard Oil’s BN—975 planar diffusion sources were used to fabricate integrated resistors. Dopant transfer was done in a N2:02:H2 ambient at 975 C. Two methods of removing the crystal defect layer formed at the surface, low temperature oxidation (LTO) and a nitric acid soak, were evaluated. Successful layer removal was achieved with the LTO. The nitric acid soak met with limited success.
"Boron Solid Source Characterization,"
Journal of the Microelectronic Engineering Conference: Vol. 2
, Article 2.
Available at: http://scholarworks.rit.edu/ritamec/vol2/iss1/2