An Electrotech Plasmafab 425 reactor was brought on line to perform reactive ion etching (RIE). Samples of Si02 over Si were etched. Results show 400 angstroms/minute using a combination of freon 23 and oxygen as the etchant with good visual uniformity. A selectivity of 6:1 for Si02:Si was achieved.
"Implementation of a Controllable Process for the RIE Etching of Si02 at RIT,"
Journal of the Microelectronic Engineering Conference: Vol. 2
, Article 18.
Available at: http://scholarworks.rit.edu/ritamec/vol2/iss1/18