A correlation between scan speed and exposure dose, was obtained for the Perkin-Elmer Model 140 Projection Aligner to Facilitate accurate resist profile modeling. A photovoltaic cell collector with filtering was mounted on a modified wafer chuck to acquire exposure data. The relationship between scan speed and exposure was found to be linear when plotted on log-log scale and predictable to within 57~. Lines of 1.4 urn in Shipley 1400-27 resist and 1.6 urn in KTI 820 resist were successfully imaged. Modeling of the scanner’s output aerial image via PROSIM (Perkin- Elmer resist profile model) was performed with fair results.
Francomacaro, Arthur Shaun
"Characterization of the Perkin-elmer Model 140 Projection Aligner Exposure Source and Modeling of Resist Profiles,"
Journal of the Microelectronic Engineering Conference: Vol. 2
, Article 13.
Available at: http://scholarworks.rit.edu/ritamec/vol2/iss1/13