A Cesium—137 gamma radiation source was used to irradiate PMOS capacitors and transistors with doses of 7.50E4, 1.50E5, 3.0E5. The devices were tested for C-V and I-V data before and after irradiation. Results show that all doses created changes in the electrical characteristics, however comparison to literature was I inconclusive.
Bates, Camille G.
"Radiation Effects on PMOS Devices,"
Journal of the Microelectronic Engineering Conference: Vol. 2
, Article 1.
Available at: http://scholarworks.rit.edu/ritamec/vol2/iss1/1