Resonant Interband Tunnel Diodes (RITD) with device sizes ranging from r=20μm to r=50nm (mask defined radii) were manufactured using an e-beam lithography and dry-etch process. The peak to valley current-ratio (PVCR) and peak current density (jpeak) of the devices were measured. The devices showed high series resistance, and currents and PVCR did not scale in a predictable pattern.
Alam, Arnob L.
"Scaling of Si/SiGe Resonant Interband Tunnel Diodes (May 2010),"
Journal of the Microelectronic Engineering Conference: Vol. 19
, Article 14.
Available at: http://scholarworks.rit.edu/ritamec/vol19/iss1/14